Abstract
Shubnikov-de Haas (SdH) oscillation measurements at 1.5K were carried out for In0.52Al0.48As/In0.65Ga0.35As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting mechanism is attributed to the contribution by the Rashba term due to the structure inversion asymmetry (SIA) in the In0.65Ga0.35As quantum well. The origin of the beating pattern in the SdH oscillations is investigated through the calculation of the transverse magnetoresistance versus magnetic field B by considering the Zeeman splitting and zero-magnetic field spin splitting in Si delta-doped In0.65Ga0.35As quantum wells. The good agreement between the theoretical and experimental curves suggest that the origin of beating patterns of the SdH oscillations is due to interplay of Rashba spin splitting, Zeeman splitting and Landau splitting.
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