Abstract
A silicon pad detector, consisting of 16 × 16 silicon diodes (150 × 150 μm pitch), with an integrated fan-out which allows readout using standard micro-strip detector front end electronics, was connected to VA2 low noise chips. The performance of the system with a measured Equivalent Noise Charge of 80 electrons can be compared with realistic pixel detectors for future particle physics experiments. In this work we present detailed experimental study of the charge collection mechanism and the spatial resolution as a function of the impact angle of traversing particles at a 100 GeV test beam at CERN. Comparison with a binary readout scheme, realistically simulated using analog information from our measurements, is done.
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