Abstract
3D silicon has undergone an intensive beam test programme which has resulted in the successful qualification for the ATLAS Insertable B-Layer (IBL) upgrade project to be installed in 2013–2014. This paper presents selected results from this study with a focus on the final IBL test beam of 2012 where IBL prototype sensors were investigated. 3D devices were studied with 4GeV positrons at DESY and 120GeV pions at the SPS at CERN. Measurements include tracking efficiency, charge sharing, time over threshold and cluster size distributions as a function of incident angle for IBL 3D design sensors. Studies of 3D silicon sensors in an anti-proton beam test for the AEgIS experiment are also presented.
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