Abstract
AbstractII–VI and I–III–VI solar cells are promising for future thin‐film photovoltaics. In this paper, the roles of electron‐beam‐induced current (EBIC) and cathodoluminescence in evaluating the influence of interfaces on those solar cells are reviewed. CdTe and Cu(In,Ga)Se2 (CIGS) are the absorbers of the cells investigated. For CdTe/CdS solar cells, a detailed study has been conducted of the effects of grain boundaries and the Te/CdTe or ZnTe:Cu/CdTe interfaces for back‐contacting. For CIGS solar cells, we have investigated different buffer layer schemes, showing that these interfaces are critical in the definition of the mechanisms for carrier collection. Copyright © 2002 John Wiley & Sons, Ltd.
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