Beam Induced Lateral Epitaxy: a new way to Lateral Growth in Molecular Beam Epitaxy

Abstract

We developed a new technique of epitaxial lateral growth without using oxide masks called beam induced lateral epitaxy (BILE). In this technique, molecular beams are directed at a nearly glancing angle with respect to a substrate that has pre-fabricated truncated ridges. By using BILE we grew GaAs laterally from the side of ridges on a GaAs substrate. The growth behavior of BILE strongly depended on both incident angle of the Ga beam and the crystal orientation of the truncated ridges. The formation of facets on the lateral growth front controlled the grown shape of the layers. By using a (111) B substrate with BILE, we grew a smooth, flat (111) B facet on the top of the layer.