Abstract
Abstract The off lattice site displacement under irradiation with 1–3 MeV H+ or He+ ions in As-doped Si is studied for both As and Si with the channeling technique. Since the trapping of vacancies by As atoms results in displacement of the latter, the As displacement is a marker for vacancy production. It appears that the beam energy and Z dependence as predicted by the elastic displacement theory are not reproduced. We attribute these deviations to the production of more complex, immobile defects rather than due to ionization effects.
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