Abstract
Beam deflection and amplitude modulation of 10.6-μm guided waves by photoinjected free carriers are demonstrated in thin-film GaAs–AlGaAs heterostructure waveguides. At high injection levels (N ≳ 5 × 1017 cm−3), amplitude modulation (up to 100%) of the 10.6-μm guided wave dominates, but at lower injection levels beam deflection is dominant. External deflection angles of the order of 1° are obtained with nanosecond response times.
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