Abstract
In this paper, we have demonstrated a 1.3 W green laser using a V-shaped intracavity frequency doubling 1036 nm semiconductor disk laser. The beam quality of the fundamental and second harmonic generation (SHG) laser is investigated. It has been found that the output lasers at the fundamental and SHG wavelength both suffer from reduced beam quality along with power scaling. The measured beam profile is elliptical under high power operation. In order to improve the SHG laser beam, an intracavity aperture is employed to control the mode characteristics of fundamental frequency light. By fine-tuning the aperture, a nearly circular beam profile with improving beam quality and brightness is realized.
Highlights
High brightness green lasers are attractive for a wide range of applications, such as laser displays, biophotonics, underwater laser communication, and pump sources for Ti:Sapphire lasers
We demonstrated a 1.3 W green laser using a V-shaped intracavity frequency doubling Semiconductor Disk Laser (SDL)
We investigate the dependences of output power and beam brightness on the aperture size
Summary
High brightness green lasers are attractive for a wide range of applications, such as laser displays, biophotonics, underwater laser communication, and pump sources for Ti:Sapphire lasers. Frequency-doubled diode pumped solid state lasers show high output power with excellent beam properties. They can only emit light in a discrete set of wavelengths dependent on certain fixed atomic transitions, limiting the widespread adoption of intended applications [5]. Using a semiconductor gain medium instead of solid crystals, optically pumped semiconductor disk lasers (OP-SDL) show promising advantages of wavelength flexibility, power scalability and good beam quality Their ability to insert a frequency doubling crystal in the resonator cavity allows the generation of a green laser beam, whose wavelength can be fine tailored around the desired wavelength by engineering the composition of semiconductor materials.
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