Abstract
Dual implantations of Be+/P+ (Be+ and P+ ions) and Be+/As+ (Be+ and As+ ions) into Al0.3 Ga0.7 As are carried out, and electrical properties of the implanted layers are evaluated by Hall-effect measurements. Improved electrical activity is observed for the dual implant compared with the single implant. In particular, in the case of the Be+/P+ dual implant, apparent hole concentration becomes nearly twice as high as that of the Be+ single implant at annealing temperatures above 650 °C. The dual implantation technique also greatly suppresses redistribution of Be atoms, and so Gaussian-type profiles remain, even after high-temperature annealing (∼950 °C).
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