Abstract
The temperature dependence of the forward current-voltage characteristics of Be-implanted p+-n junctions in In0.53Ga0.47As is presented. The results are interpreted on the basis of a diffusion current component and a recombination current component. The best diodes obey a pure diffusion current equation, J=J0(T)exp(qV/kT) for a current range of five decades and for temperatures above 200 K.
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