Abstract
The electronic characteristics of narrow-gap III–V semiconductor InSb make this material play an important role in infrared detectors. In this material, p–n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of beryllium might lead to strong limitation of its industrial use in future. Mg-ion could then be an attractive substitute. In this paper, a comparison between different Be-and Mg-ion implanted bulk InSb samples is made by means of X-ray diffraction, IR-reflectivity and RBS-channelling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
