Abstract
The etch of <TEX>$(Na_{0.5}K_{0.5})NbO_3$</TEX> (NKN) thin film was performed in <TEX>$BCl_3/Cl_2/Ar$</TEX> inductively coupled plasma. It was found that the 1sccm addition <TEX>$BCl_3$</TEX> (5%) into <TEX>$Cl_2/Ar$</TEX> plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at <TEX>$BCl_3$</TEX> (1 sccm)/<TEX>$Cl_2$</TEX> (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra of XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
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