Abstract
In this paper, a cyan-emitting phosphor BaZrSi3O9:Eu2+ was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 380–420 nm region, and the emission intensity of the optimized BaZrSi3O9:Eu2+ was found to be 90% and 198% of that of the commercial BaMgAl10O17:Eu2+ (BAM:Eu2+) under excitation at 405 nm and 420 nm, respectively. Upon excitation at 405 nm, the quantum efficiency of the optimized BaZrSi3O9:Eu2+ is 83% of that of BAM:Eu2+. The performance of this phosphor was further tested to fabricate white LED lamps. By coating BaZrSi3O9:Eu2+ with a green-emitting (Ba,Sr)2SiO4:Eu2+ and a red-emitting CaAlSiN3:Eu2+ on a near-ultraviolet (405 nm) LED chip, driven by a 350 mA forward bias current, intense warm white light with a color rendering index of 90 has been produced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
