Abstract
Large number of millimeter wave Impatt diodes have been fabricated out of reasonably large size silicon wafer with very good uniformity in electrical characteristics using the technique reported here. Modification in processing adopted in the present work led to very high yield and improved thermal impedance during packaging of Impatts. These improvements are due to better surface finish in integral heatsink pads and controlled thinning. The present process has been tried on silicon SDR and DDR Impatts over a frequency range of 10 to 100 GHz. Other devices like silicon Baritts and GaAs transferred electron devices have also been batch fabricated successfully using the same technique.
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