Abstract
In this study, Zr and/or Mn, Fe or Co ions were used to induce a robust room temperature ferromagnetic nature in perovskite BaSnO3 for high performance information applications. Dilute magnetic semiconductor compositions with formula of BaSn0.96-XZr0.04MXO3 (M = Mn, Fe, Co, x = 0, 0.02) have been synthesized at 1150 °C. For all compositions, mono-phase of cubic BaSnO3 structure with very small impurities of SnO2 were recorded based on X-ray diffraction analysis. The relation between ionic size of dopants and crystal dimension of BaSnO3 suggests the of Sn4+-site by Zr4+, Mn2+, Fe2+ or Co2+ ions. Extended absorption tails to visible light region were found for BaSn0.94Zr0.04Mn0.02O3 and BaSn0.94Zr0.04Co0.02O3 samples, owing to strong defect band transition absorption. Due to the addition of Zr and/or Mn, Fe or Co ions high refine of BaSnO3 morphology from inhomogeneous large grains to well distribute small one were seen. The XPS results of BaSn0.96Zr0.04O3 and BaSn0.94Zr0.04Co0.02O3 samples confirm that Ba, Sn, O and Zr are in the oxidation states of +II, +IV, −II and +IV/+III, respectively. Magnetically, incorporation of 4 wt% Zr4+ ions (empty 4d-orbital) induced a full-saturated spin ferromagnetic order with saturation magnetization of 1.16 emu/g, retentivity of 0.11 emu/g and coercivity of 147 Oe. Also, codoping by Zr/Co ions stimulates a full-saturated spin ferromagnetic order with saturation magnetization of 1.36 emu/g, retentivity of 0.17 emu/g and coercivity of 149 Oe. The empty 4d-Zr4+ ions have high ability in reversing the diamagnetic nature of BaSnO3 to ferromagnetic one through interaction with oxygen vacancies. The outer 4d-shell of Zr and 3d-orbital of Co with the oxygen vacancies induce the strong magnetic exchange interaction. Through looking into the previous studies on the magnetic properties of BaSnO3, the recorded saturation magnetization of 4 wt% Zr and 4 wt% Zr + 2 wt% Co ions are remarkable values.
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