Abstract
The BaPb1-xBixO3(BPB) system is orthorhombic for x<0.9 at room temperature, and for x≤0.4, exhibits a second order structural phase transition at low temperatures. Next, electron transfer in BPB is strongly influenced by electron localization due to oxygen vacancies and Bi ions, which may explain the composition-induced metal-insulator transition at x=0.35. The magnetic penetration depth is about 2 µm at 4.2 K, which is twice larger than the value calculated from the GL theory. Furthermore, polycrystalline BPB films make highly sensitive infrared optical detectors.
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