Abstract
Abstract Scanning electron microscope cathodoluminescence (CL) and electron beam induced current (EBIC) contrasts of crystallographically defined single misfit dislocations in epilayers of the III–V semiconductor materials GaAs, GaAsP, GaP were analysed. The use of a realistic generation distribution allows an exact calculation and fit to experimental beam voltage dependent contrast profiles of selected surface-parallel dislocation lines. Differences in the recombination activity (defect strengths) derived from EBIC and CL contrasts are interpreted as a contribution of additional radiative recombination of the defect region to the CL signal.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
