Abstract
Hydrogenated amorphous silicon oxycarbide (a-SiOC∶H) thin films were prepared by plasmaenhanced chemical vapor deposition (PE CVD) using an RF helical coupling pulsed-plasma system. Films of the thickness ranging from 210 nm to 1.4 μm were deposited on silicon wafers from vinyltriethoxysilane (VTES) precursor. The thickness of plasma-polymerized films was measured by a Profilometer Talystep using a defined seratch in the layer as deep as the substrate. The deposition rate was observed with respect to the effective power used and the determined dependence could be explained on a basis of the competitive ablation and polymerization mechanisms. Very high deposition rates as far as about 110 nm/min could be reached if proper deposition conditions were tuned. The elemental composition of thin films were studied by conventional and resonant Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C and O bulk content was correlated with the surface one determined from analyses of the photoelectron spectra using X-ray Photoelectron Spectroscopy (XPS).
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