Abstract

Layer-by-layer-crystallized (SBT) films were deposited by metallorganic decomposition on a 14-nm-thick buffer layer. Experimental results indicate that the metal-ferroelectric-insulator-semiconductor (MFIS) stack with a layer-by-layer-crystallized SBT film exhibits ferroelectric hysteresis and a memory window of around 0.34 V at an operating voltage of 6.0 V. When postdeposition annealing was performed at 850°C, the layer-by-layer-crystallized MFIS structure exhibited favorable switching characteristics with negligible degradations of the memory window and capacitance retention time. The retention time of this structure exceeded and the extrapolated time was about .

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.