Abstract
Now day with the development of technology, our electronic device is upgraded. Which will bring more data to storage. This causes the development of memory device. Now we already have SRAM flash memory are being widely used. But as the we use it for long time, the disadvantage of these memory device is shown, therefore, a new memory device --STT-MRAM are been created, which is we are going to introduce, we will show you how it basic structure which is MRAM work and the mechanism of the magnetic tunnel junction (the part it storage messages) and how spin electron influence the MTJ to make it more effective. Follow that we will list and make a comparison of the advantage of STT-MRAM and the disadvantage of flash memory, SRAM and DRAM to show the potential of the STT-MRAM. After mentioned about the benefit of STT-MRAM, we will mention about the disadvantages of it such as hard to maintain high thermal stability barrier. We will give the possible solutions follow that. This text intended to introduce this new type of memory device-STT-MRAM and show the potential of it in the future.
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