Abstract
A theoretical analysis of the base transit time in npn GaN/InGaN heterojunction bipolar transistor has been performed. For the analysis the effect of band-gap narrowing, carrier degeneracy, and compositional grading of the base region has been considered. The analysis demonstrates that a nonuniform doping in the base region with a higher value at the emitter edge and a lower value at the collector edge together with a compositional grading is necessary for minimizing the base transit time.
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