Abstract
The change of base resistance in Si-UJT under irradiation of 60Co γ-ray is provided. Through multipoint measurement and real-time monitoring, it was shown that the base resistance decreased immediately and then increased slowly. Compared with domestic and foreign related research results, this proves that the displacement effect is the main effect of base resistance in Si-UJT irradiated by 60Co γ-ray, but it lags behind the ionization effect from microanalysis of the interaction between γ-ray and Si material. This is very important for the radiation hardened research.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.