Abstract
Electron spin resonance (ESR) was investigated in the vicinity of insulator-metal (IM) transition in 4H-SiC : N. The ESR spectra transformation was observed from an electron concentration of n = 2.5 x 10 17 to 2.5 x 10 19 cm -3 ; The increase of the spin density with the electron one was measured for n 6 x 10 18 cm -3 . The critical electron density was estimated for the insulator-metal (IM) transition in 4H-SiC n c = 1 × 10 19 cm -3 . In the vicinity of the IM transition three new ESR lines were found: the first was originated from the deep defects, the second and the third were due to the free spins in the impurity or in the conduction band.
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