Abstract
A peculiar surface defect on a silicon carbide (SiC) epitaxial wafer, found to be associated a basal plane dislocation (BPD), was studied using a low energy scanning electron microscope (LESEM), and a novel method we are calling multi directional scanning transmission electron microscopy (MD-STEM). We have confirmed that an etch pit with double cores neighboring a peculiar surface defect is derived from the extended BPD. The BPD consisted of two partial dislocations with a stacking fault width of about 100 nm. Observation of only one viewing direction in a previous study missed the extended dislocation but through the use of the MD-STEM method in the current study, the dislocation has been confirmed to be extended into a stacking fault.
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