Abstract

Thin film chemical vapour deposition technique has been used for more than 50 years. Introducing organo-silicones as precursors, e.g. hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS), brought new possibilities to this method. Barrier properties of thin films have become an important issue, especially for army and emergency services as well as for food and drink manufacturers. Our work is focused on protective HMDSO thin films for encapsulating cleaned archaeological artefacts, preventing the corrosion from destroying these historical items.Thin films are deposited via plasma enhanced chemical vapour deposition (PECVD) technique using low pressure capacitively coupled pasma in flow regime. Oxygen transmission rate (OTR) measurement was chosen as the most important one for characterization of barrier properties of deposited thin films. Lowest OTR reached for 50 nm thin film thickness was 120 cm3 m-2 atm-1 day-1. Samples were also analyzed by Fourier Transform Infrared spectrometry (FTIR) to determine their composition. Optical emission spectra and thin film thickness were measured during the deposition process. We optimized the deposition parameters for barrier layers by implementation of pulsed mode of plasma and argon plasma pre-treatment into the process.

Highlights

  • Chemical vapour deposition has been used for thin film production for more than 50 years

  • We focused on films with low Oxygen transmission rate (OTR) only, optimizing the parameters of the experiment to obtain as low OTR as possible

  • Thin films were deposited via low pressure Plasma enhanced chemical vapour deposition (PECVD) using HMDSO as a precursor

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Summary

Introduction

Chemical vapour deposition has been used for thin film production for more than 50 years. We can find many successful applications in different industry branches, e.g. in automotive, food industry or in medicine. During 1980’s, this deposition technique has been improved by adding plasma to the process. Plasma enhanced chemical vapour deposition (PECVD) or plasma assisted chemical vapour deposition (PACVD) allow using many new types of precursors, especially organosilicones. Organic groups have nearly infinite options for proper control of deposited layers. They are compatible with other organic compounds and provide elasticity, preventing the layer to crack. Hexamethyldisiloxane (HMDSO) and tetraethyl orthosilicate (TEOS) are used as PECVD precursors very often [2,3]. Main applications of organosilicone precursors are in microelectronics [4], automotive and food industry [5]

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