Abstract
We have prepared thin ZrNx films at low temperatures without substrate heating. In the proposed process, radical species generated by the catalytic decomposition of NH3 molecules react on the sputtered Zr film to form ZrNx. The barrier performance of the obtained 5-nm-thick ZrNx film is as good as that prepared by reactive sputtering at 350 °C, indicating the usefulness of the proposed method in forming ZrNx films at low temperatures. We have also demonstrated the general effectiveness of the method for ZrNx preparation in addition to the previous result of TiNx.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
