Abstract
Ultrathin amorphous Ni–Ti film is investigated as conductive diffusion barrier layer to integrate La0.5Sr0.5CoO3∕PbZr0.4Ti0.6O3∕La0.5Sr0.5CoO3 (LSCO/PZT/LSCO) capacitors on silicon. X-ray photoelectron spectroscopy results demonstrate that Ni in LSCO∕Ni–Ti∕Si heterostructure is not oxidized after 550°C annealing in oxygen. The structural properties of LSCO∕PZT∕LSCO∕Ni–Ti∕Si are characterized by x-ray diffraction and transmission electron microscopy. It is found that Ni–Ti film is still amorphous and that there are no discernible reactions at the interfaces of the sample. LSCO/PZT/LSCO capacitor, measured at 5V, possesses very good ferroelectric properties, such as low coercive field (∼1.28V), high remnant polarization (∼27.9μC∕cm2), and good fatigue-free characteristic, implying that ultrathin amorphous Ni–Ti film can be used as barrier layer for fabricating high-density ferroelectric random access memories.
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