Abstract
Using a scanning tunnelling microscope, the tunnelling currentvs. voltage is measured between a gold tip and the chemically etched (001) surface of YBa2Cu3Ox crystals at room temperature. The tunnelling barrier height and thickness are derived by modelling the system in the normal state as a conventional N-I-N junction. TheI(V) andG(V) curves are computed for the same junction in the superconducting state (N-I-S junction). The predicted gap structure for a single BCS-Dynes-like gap is simple and has low zero-bias conductance. The complexG(V) spectra measured belowTcon the etched junctions with ∼ 50% zero-bias conductance suggest a possible multilayer contribution in the unit cell.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
