Abstract
The reaction scheme in W/TiN/TiSi2/Si(100) and W/TiN/Si(100) systems was studied by Rutherford backscattering spectroscopy. By using the TiN/TiSi2 and TiN diffusion barrier layers, the tungsten silicidation rate is reduced by 2 and 4.5 orders of magnitude, respectively, compared with the silicidation rate of the W/Si system. Considering the activation energy of the WSi2 formation, the reaction rate for the W/TiN/TiSi2/Si system is found to be controlled by the Si supply at the W/TiN interface. Si is supplied from the Si substrate through the TiN/TiSi2 layer to the W/TiN interface. The rate-limiting process is considered to be the Si bond breaking at the TiSi2/Si interface. TiN films with 10 nm thickness are thick enough to suppress reactions and maintain adhesion even after annealing at 950°C for 5 h.
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