Abstract
AbstractBarrier layerless submicron damascene interconnection has been realized by using a combination of novel aluminum chemical vapor deposition (AI‐CVD) and chemical mechanical polishing (CMP) techniques. A new nucleation method with tetrakis‐dimethyl‐amino titanium (TDMAT) gas pretreatment has enabled AI‐CVD to fill trenches without using a barrier layer which causes high resistivity. As a result, this technology achieved Al damascene interconnections with resistance as low as 600 ω/cm with half‐micron wide line and an aspect ratio of 3. This line resistance is one‐third of that for a conventional reactive ion‐etched Al line with an aspect ratio of 1.
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