Abstract
The applicability of the infinite-barrier scheme to the study of the confinement mechanism for the optical phonons in GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As heterostructures is critically addressed. In the framework of a bond-charge-model calculation, we demonstrate that the line shape of ${\mathrm{LO}}_{1}$ GaAs-like displacement patterns differs from a sinelike function and depends on the Al content of the ternary barrier, preventing the extension of the infinite-barrier scheme to ternary systems. Finally, the analysis of Raman intensities is indicated as a suitable probe of the confinement efficiency because of its sensitivity to the displacement pattern line shape.
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