Abstract
To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400°C to 700°C) to form PtSi . The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20–290 K) over which the I–V characteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance–voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide–silicon interface. The forward C–V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.
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