Abstract
The barrier height of MIS tunnel diode is studied considering exponentially distributed deep level impurities. The space charge density has been calculated as a prior requirement for the evaluation of the barrier height and found sensitive to the deep level parameters. The barrier height of the device is found to increase with deep level density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
