Abstract
The current-voltage characteristics of Cu- n MoSe 2 Schottky diodes measured over a wide temperature range 50 T Φ b 0 and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of barrier height inhomogeneities at the metal-semiconductor interface. It is proven that the presence of a distribution of barrier heights is responsible for the apparent decrease of the zero-bias barrier height. The voltage dependence of the standard deviation causes the increase of ideality factor at low temperatures. The mean barrier height Φ b 0 = 1.05 eV and the Richardson constant A * = 89.7 A cm −2 k −2 have been calculated by means of the modified Richardson plot. The value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights with that of the theoretical value.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
