Abstract
The characteristics of titanium (Ti) or molybdenum (Mo) as Schottky contact of device based on 4H-SiC material were investigated. The parameters deduced from static characterisation of Ti/4H-SiC show an increase of barrier height (ϕB) from 0.76 to 1.26 eV and a decrease of ideality factor (n) from 1.26 to 1.07 when the temperature varies from 10 to 460 K. Whereas in the Mo/4H-SiC the barrier height increases from 0.45 to 1.05 eV and the ideality factor decreases from 2.20 to 1.03. When the temperature decreases, a deformation of J–V characteristics appears for T < 300 K. The current through an inhomogeneous junction has been proposed to be described by a parallel conduction model used when there is a region of different barrier height in a non-uniform interface. The evolution of ϕB and n as function of temperature improves the deviation from typical thermionic model, implying geometry based on circular patches of low Schottky barrier height (SBH) incorporated in a region of higher SBH.
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