Abstract
The effect of (NH 2) 2S and P 2S 5/(NH 4)S solution treatment on the electrical characteristics of Pt/ n-InP Schottky diodes has been investigated. The barrier heights of the diodes fabricated on these sulfidation treated n-InP wafers can be enhanced and the reverse current reduced, especially in P 2S 5/(NH 4) 2S (0.02 g/ml) solution treatment. Auger electron spectroscopy analysis on the P 2S 5/(NH 4) 2S-treated wafers, indicated that surface In atoms are mainly bonded to S atoms while there is no P-S bonding. Furthermore, a thin layer of In 2S 3, which is believed to act as an important role for the barrier height enhancement of the diode, on the P 2S 5/(NH 4) 2S-treated wafer has been identified.
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