Abstract
A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P2S5/(NH4)2Sx] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes. It is found that, even though the Ag/n-GaAs and Ag/n-InP diodes were baked for 18 h at 300 °C, their Schottky barriers could still reach as high as 1.1 and 0.95 eV, respectively. After the bare semiconductor substrates were bathed successively in P2S5/(NH4)2Sx and HF solutions and then shone by an ultraviolet light, the analysis with x-ray photoelectron spectroscopy indicates a possible formation of ultrathin and stable sulfur fluoride or phosphorus fluoride layers on the substrate surfaces. The formation of these stable interface layers has been attributed to the enhancement of Schottky barrier heights.
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