Abstract
The influence of rapid thermal annealing on WSi2/GaAs and WSi0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spectroscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X-ray diffraction (XRD) analysis and current-voltage electrical measurement. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barrier enhancements were registered, especially for WSi2/GaAs diodes. For an explanation of this effect, the barrier height inhomogeneity concept is used.
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