Abstract
We report a study on flicker noise reduction in the space charge limitation region of a Zn-Pd/n-In0.49Ga0.51P Schottky barrier diode (SBD). A suitable model has been suggested to explain the barrier height dependence of the Fano factor. The reduction of Fano factor with barrier height has been experimentally investigated from I-V characteristics and noise power density measurements. Finally a comparative study was made with the theoretically obtained value of the Fano factor. Another important parameter, known as the Hooge parameter, of InGaP SBD has also been calculated as a function of temperature.
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