Abstract
Using photoelectron spectroscopy, we have reexamined the barrier height at Au/InAs(100) contacts prepared under ultrahigh vacuum conditions. The n-barrier height is 0.010±0.050 eV: the Fermi level at the interface is right at the InAs conduction band edge. This result is expected from models based on charge transfer into metal-induced gap states but contrasts with previously published experimental values. Depending on the preparation procedure, the surface of InAs(100) grown using molecular-beam epitaxy shows c(4×4) or (2×4) reconstruction; the barrier height, however, is independent of the surface reconstruction prior to gold deposition.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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