Abstract
Delta-doped layers together with compositionally grading have been utilized to get nBn configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave (MWIR) and long-wave (LWIR) infrared bands. Shockley Read Hall (SRH), trap-assisted tunneling (TAT), Auger and radiative recombination mechanisms have been included in the analyses and strong suppression of SRH and TAT currents have been demonstrated with the designed structures. This methodology is especially useful when the carrier lifetime is limited due to alternative substrate usage. No degradation in photo-response has been observed as adjusting the valence band offset is quite flexible with the delta-doped nano-layers and the valence band barrier can be completely removed. Calculations have been performed for 1–3 μs lifetime targeting the alternative substrate applications and up to 60 degrees of increase in the operation has been shown to be possible.
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