Abstract
The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200K with the ideality factor and the barrier height close to 1.09 and 0.7eV, respectively. At temperatures below 200K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88eV and standard deviation of 10−4cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7Acm−2K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.
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