Abstract
Barium titanate (BaTiO3 or BTO) is currently one of the most promising ferroelectric materials for enabling Pockels modulation that is compatible with silicon photonic circuits. The relative permittivity of BTO has been characterized in thin films deposited on a silicon-on-insulator (SOI) substrate. High values between 800 and 1600 have been estimated at 20 GHz. Furthermore, no substantial difference has been obtained by using BTO grown by molecular beam epitaxy and sputtering. The obtained permittivity has been used to properly design the RF electrodes for high-speed modulation in hybrid BTO/Si devices. Electrodes have been fabricated and the possibility of achieving modulation bandwidths up to 40 GHz has been demonstrated. The bandwidth is limited by the microwave propagation losses and, in this case, different losses have been measured depending on the BTO growth process.
Highlights
Ferroelectric materials with high permittivity have been largely investigated for ceramic applications [1, 2]
The high value obtained for the BTO is in agreement with BTO grown mostly with c-axis ferroelectric domain orientation [5, 24], which was confirmed by X-ray diffraction (XRD) measurements
A multi-line method combined with electromagnetic simulations has been proposed and demonstrated to obtain the relative permittivity of BTO thin films deposited on top of a SOI substrate
Summary
Ferroelectric materials with high permittivity have been largely investigated for ceramic applications [1, 2] These materials have found application in other fields such as phased array antennas [3] or planar microwave integrated phase shifter [4]. The Pockels effect is intrinsically lossless and ultra-fast In this way, high modulation efficiencies and the potential for achieving modulation bandwidths above 40 GHz have been demonstrated by using BTO deposited on top of magnesium oxide (MgO) substrates [7,8,9,10,11]. Once the BTO permittivity is obtained, RF electrodes have been designed for high speed modulation in hybrid BTO/Si devices.
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