Abstract
Novel strontium bismuth tantalate (Sr0.8Bi2.2Ta2O9 (SBT)) modified with 3 and 5 mol% ratio barium silicate (Ba2SiO4) thin films were grown on Pt(100 nm)/Ti(50 nm)/SiO2/Si(100) substrates by spin coating technique. The influence of barium silicate doping in SBT was studied from the view point of changing dielectric and ferroelectric properties like dielectric constant (εr) and remnant polarization (Pr). Well crystallized thin films showed convenient ferroelectric properties with comparatively lower Pr in the range between 1.52 and 0.44 µC/cm2 and smaller εr value of 163. Thus, with such reduced values of Pr and εr barium silicate modified SBT offers a useful potential to be used in Ferroelectric Field Effect Transistor (FeFET) type (1T-type) Ferroelectric Random Access Memories (FeRAMs) upon improving insulation properties.
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