Barium hexaferrite/muscovite heteroepitaxy with mechanically robust perpendicular magnetic anisotropy

Wei-En Ke,Tsuyoshi Kimura,Rong Huang,Ying-Hao Chu,Chun-Fu Chang,Naoki Yagi,Yugandhar Bitla,Chang-Yang Kuo,Haili Song,Pao-Wen Shao

doi:10.1038/s41528-021-00130-y

Abstract

Recent advances in the design and development of magnetic storage devices have led to an enormous interest in materials with perpendicular magnetic anisotropy (PMA) property. The past decade has witnessed a huge growth in the development of flexible devices such as displays, circuit boards, batteries, memories, etc. since they have gradually made an impact on people’s lives. Thus, the integration of PMA materials with flexible substrates can benefit the development of flexible magnetic devices. In this study, we developed a heteroepitaxy of BaFe12O19 (BaM)/muscovite which displays both mechanical flexibility and PMA property. The particular PMA property was characterized by vibrating sample magnetometer, magnetic force microscopy, and x-ray absorption spectroscopy. To quantify the PMA property of the system, the intrinsic magnetic anisotropy energy density of ~2.83 Merg cm−3 was obtained. Furthermore, the heterostructure exhibits robust PMA property against severe mechanical bending. The findings of this study on the BaM/muscovite heteroepitaxy have several important implications for research in next-generation flexible magnetic recording devices and actuators.

Highlights

The demand for high-density recording devices has been increasing over the past few decades
The perpendicular magnetic anisotropy (PMA) property remains robust even under severe mechanical bending. These results demonstrate that BaM/muscovite heteroepitaxy can lead to potential applications in flexible magnetic recording devices and actuators with high-temperature stability in the future
Muscovite mica has been suggested as an excellent platform for the growth of oxide heteroepitaxy[13]. This motivated us to adopt muscovite as the substrate to grow BaM film to obtain PMA

Summary

Introduction

The demand for high-density recording devices has been increasing over the past few decades. F Schematic of the epitaxial relationship of BaM film and muscovite substrate. These results demonstrate that BaM/muscovite heteroepitaxy can lead to potential applications in flexible magnetic recording devices and actuators with high-temperature stability in the future.

Results

Conclusion