Abstract
We report the observation of band-edge photoluminescence (PL) in highly photoexcited ${\text{SrTiO}}_{3}$ and electron-doped ${\text{SrTiO}}_{3}$ at low temperatures. Two band-edge PL peaks coincide with the low- and high-temperature onsets of optical absorption. This clearly shows that band-edge PL peaks correspond to indirect band-to-band radiative recombination involving phonon emission and absorption processes and allows a determination of the band gap. The PL peaks redshift with increasing carrier density, indicating band-gap shrinkage. The temperature dependence of the band-edge PL and optical absorption spectra are also discussed in conjunction with phonon-assisted optical transitions.
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