Abstract
In this paper, p-channel junctionless (JL) silicon-oxide–nitride-oxide–silicon (SONOS)-type nonvolatile memory (NVM) devices with gate-all-around (GAA) nanowire (NW) structure by using silicon-nanocrystal for the charge-trapping layer are presented. The devices exhibited good erase efficiency and excellent retention behavior and can be used in system-on-panel and 3-D-stacked flash memory applications. In addition, a band-to-band hot hole (BBHH) method for erasing is proposed and compared with the Fowler–Nordheim (FN) tunneling method. Because FN erasing requires a high gate voltage, BBHH erasing, which requires a low voltage, can increase the service life of the memory. Channel hot electron and band-to-band hot electron were used for programming and yielded low programming efficiency for the p-channel JL GAA NW NVM devices because of a lack of electron carriers. The program/erase efficiency is related to the channel type in JL NVM devices.
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