Abstract
The band structures of GeSe, GeS, SnSe and SnS layered semiconductor compounds have been calculated by the EO LCAO method in a single-layer approximation. The Madelung energy of electron in the field of all lattice ions was taken into account. The results of band-structure and density-of-states calculations are in good agreement with earlier calculations carried out by the pseudopotential method. It is shown that, unlike Ge chalcogenides, the minimal energy gap for Sn chalcogenides is situated on the symmetry line Lambda (k, 0, 0) and not on V(0, 0, k). The effective masses of electrons and holes near band extrema have been calculated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
