Abstract
In this study, we investigated the influence of annealing temperature on ultra-small SnO2 quantum dots (SQDs) prepared by a simple chemical reduction process. The structural and optical properties of annealed SQDs were systematically studied by different techniques. Our results show that the crystallinity and average crystallite size of annealed SQDs increased gradually with annealing temperature. The average crystallite size was maintained below 10 nm even for high annealing temperatures. XPS peak fitting analysis yielded information on the presence of mixed ionic states of Sn2+ and Sn4+ in SQDs and further revealed that the number of Sn2+ ions decreased at high temperature. Band-edge shifts were estimated from XPS data. It was possible to shift the bandgap of annealed SQDs from UV to the visible wavelength region, which is likely to have a beneficial impact on many applications of optoelectronic devices.
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