Abstract
Semiconductors having a carrier density greater than Mott's critical density show a widening of the band gap with carrier density due to the Burstein-Moss effect which is partially compensated by a narrowing due to the upward shift of the valence band and the downward shift of the conduction band. Theoretical calculations of band-gap narrowing have been made assuming parabolic valence and conduction bands of effective mass 0.6 m e and 0.3 m e, respectively. These effects make a major contribution in band-gap narrowing. The theoretical calculations have been made and compared with the measured values in RF-sputtered ITO films. The agreement between experimental and theoretical values can be made by assuming values for E g0 and m ∗ v. However, different values for these parameters in electron-beam evaporated and RF-sputtered films are obtained. The implications of this difference are discussed.
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